Abokan hulɗa IBM da Samsung Electronics suna sanar da haɓaka sabon ƙirar guntu. Ta hanyar tsara transistor na guntu ta wata hanya dabam, ƙungiyoyin sun ce suna da hanyar kera wayoyin hannu tare da rayuwar baturi na tsawon mako guda.
Yawancin kungiyoyi masu sha'awar ci gaban guntu suna saka hannun jari don rage girman transistor. Ƙananan transistor, ƙarin transistor guntu yana ba da izini. Yawan transistor guntu yana ba da izini, guntu mafi inganci.
IBM ba banda ga ka'ida ba. A farkon wannan shekarar, kungiyar ta ce ta dauki wani muhimmin mataki wajen samar da na'ura mai lamba 2 nanometer (nm). A daidai wannan lokacin, ASML ƙera guntu na Dutch ya ba da sanarwar irin wannan ci gaba.
Fasaha don samar da transistor na 2nm yana haifar da muhimmin sharadi don haɓaka guntu. Amma akwai hanyoyi da yawa da ke kaiwa Roma. IBM da Samsung Electronics sun ce sun sami ɗayan waɗannan hanyoyin. Hanyarsu ba ta kewaye girman transistor ba, amma tsarin sararin samaniya na transistor.
Fasaha
A halin yanzu, masana'antun guntu irin su TSMC da Samsung Electronics suna amfani da abin da ake kira ƙirar FinFET, gajere don 'fin filin-inffect transistor'. IBM da Samsung Electronics suna fitowa tare da ƙirar VTFET, gajere don 'transistor filin sufuri a tsaye'.
Samsung da IBM sun ce ƙirar VTFET na iya isar da wutar lantarki sau biyu da ƙasa da kashi 85 cikin ɗari fiye da ƙirar FinFET. Dalili? Kungiyoyin sun ce "tsari a tsaye na transistor, sabanin FinFET," in ji kungiyoyin.
Hoton da ke ƙasa yana bayyana bambancin ƙira. Kodayake IBM ta yi nasarar gwada ƙirar tare da samar da kwakwalwan gwaji, ƙungiyoyin ba su bayyana ko kuma lokacin da kwakwalwan kwamfuta za su bayyana a kasuwa ba. Duk da haka, ƙungiyoyin sun ce VTFET yana buɗe hanya ga wayoyin hannu tare da rayuwar baturi fiye da mako guda da kuma ingantaccen aikace-aikacen IoT a cikin sararin samaniya da motocin tuƙi.