Ozakwethu i-IBM kanye ne-Samsung Electronics bamemezela ukuthuthukiswa komklamo omusha we-chip. Ngokuhlela ama-transistors we-chip ngenye indlela, izinhlangano zithi zinendlela yokukhiqiza ama-smartphones anempilo yebhethri yesonto lonke.
Iningi lezinhlangano ezinentshisekelo ekuthuthukisweni kwama-chip zitshala imali ekwehliseni ama-transistors. Ama-transistors amancane, ama-transistors amaningi avumela i-chip. Uma i-transistors ivumela i-chip, i-chip iphumelela kakhulu.
I-IBM ayihlukile kulo mthetho. Ngasekuqaleni konyaka, le nhlangano ithe ithathe igxathu elibalulekile mayelana ne-2 nanometer (nm) transistor ebihahelwayo. Ngaso leso sikhathi, umenzi we-chip waseDutch u-ASML umemezele intuthuko efanayo.
Ubuchwepheshe bokukhiqiza ama-2nm transistors budala umbandela obalulekile wokuthuthukiswa kwe-chip. Kodwa kunemigwaqo eminingana eholela eRoma. I-IBM kanye ne-Samsung Electronics bathi bathole enye yalezo zindlela. Indlela yabo ayijikelezi ngobukhulu bama-transistors, kodwa ukuhlelwa kwendawo kwama-transistors.
Ubuchwepheshe
Njengamanje, abakhiqizi bama-chip abafana ne-TSMC kanye ne-Samsung Electronics basebenzisa idizayini ebizwa nge-FinFET, okufushane nge-'fin field-effect transistor'. I-IBM kanye ne-Samsung Electronics baphuma nedizayini ye-VTFET, emfushane ye-'vertical transport field effect transistors'.
AbakwaSamsung kanye ne-IBM bathi idizayini ye-VTFET ingaletha amandla aphindwe kabili kanye nokusetshenziswa kwamandla okungamaphesenti angama-85 kunemiklamo ye-FinFET. Isizathu? "Ukuhlelwa okuqondile kwama-transistors, ngokungafani ne-FinFET," kusho izinhlangano.
Isithombe esingezansi sibonisa umehluko wokuklama. Yize i-IBM ihlole ngempumelelo umklamo ngokukhiqizwa kwama-chip chips, izinhlangano azicacisi ukuthi ama-chip azovela nini futhi nini emakethe. Kodwa-ke, izinhlangano zithi i-VTFET ivula indlela yama-smartphones anempilo yebhethri engaphezu kwesonto kanye nezinhlelo zokusebenza ezisebenza kahle ze-IoT kumikhumbi-mkhathi nasezimotweni ezizishayelayo.